RQJ0306FQDQA features ? low gate drive v dss : ?30 v and 2.5 v gate drive ? low drive current ? high speed switching ? small traditional package (mpak) outline (package name: mpak ) 1. source 2. gate 3. drain g d s 2 1 3 1 2 3 notes: marking is "fq". absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss ?30 v gate to source voltage v gss +8 / ?12 v drain current i d ?3 a drain peak current i d(pulse) note1 ?12 a body - drain diode reverse drain current i dr 3 a channel dissipation pch note2 0.8 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. when using the glass epoxy board (fr-4 40 40 1 mm) 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?30 ? ? v i d = ?10 ma, v gs = 0 gate to source breakdown voltage v (br)gss +8 ? ? v i g = +100 a, v ds = 0 gate to source breakdown voltage v (br)gss ?12 ? ? v i g = ?100 a, v ds = 0 gate to source leak current i gss ? ? +10 a v gs = +6 v, v ds = 0 gate to source leak current i gss ? ? ?10 a v gs = ?10 v, v ds = 0 drain to source leak current i dss ? ? ?1 a v ds = ?30 v, v gs = 0 gate to source cutoff voltage v gs(off) ?0.4 ? ?1.4 v v ds = ?10 v, i d = -1 ma drain to source on state resistance r ds(on) ? 75 95 m ? i d = ?1.5 a, v gs = ?4.5 v note3 drain to source on state resistance r ds(on) ? 120 165 m ? i d = ?1.5 a, v gs = ?2.5 v note3 forward transfer admittance |y fs | 3.5 5.2 ? s i d = ?1.5 a, v ds = ?10 v note3 input capacitance ciss ? 510 ? pf output capacitance coss ? 100 ? pf reverse transfer capacitance crss ? 58 ? pf v ds = ?10 v, v gs = 0, f = 1 mhz turn - on delay time t d(on) ? 18 ? ns rise time t r ? 48 ? ns turn - off delay time t d(off) ? 47 ? ns fall time t f ? 13 ? ns i d = ?1.5 a v gs = ?4.5 v r l = 6.7 ? r g = 4.7 ? total gate charge qg ? 4.8 ? nc gate to source charge qgs ? 0.8 ? nc gate to drain charge qgd ? 1.8 ? nc v dd = ?10 v v gs = ?4.5 v i d = ?3.0 a body - drain diode forward voltage v df ? ?0.8 ?1.2 v i f = ?3.0 a, v gs = 0 note3 notes: 3. pulse test 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com RQJ0306FQDQA product specification
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